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MFG:IR  Package Cooled:TO-247  D/C:6  

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Part Number: IRFP140N

 

MFG: IR

Package Cooled: TO-247

D/C: 6

 

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IRFP140N Maximum Ratings

Parameter

Max.
Units
ID @ TC = 25°C
 Continuous Drain Current, VGS @ 10V…
33
A
ID @ TC = 100°C
 Continuous Drain Current, VGS @ 10V……
23
IDM
 Pulsed Drain Current ………
110
PD @ TC = 25°C
 Power Dissipation
140
W
 Linear Derating Factor
0.91
W/°C
VGS
 Gate-to-Source Voltage
±20
V
EAS
 Single Pulse Avalanche Energy ……
300
mJ
IAR
 Avalanche Current
16
A
EAR
 Repetitive Avalanche Energy
14
mJ
dv/dt
 Peak Diode Recovery dv/dt
5.0
V/ns
TJ
 Operating Junction
-55 to + 175
TSTG
 Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
 Mounting torque, 6-32 or M3 screw.
10 lbf•in (1.1N•m)
g

IRFP140N Features

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.  This benefit,combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices.  The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.

IRFP140N datasheet

IRFP140N
PDF/DataSheet Download

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