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IRFP22N60K

MOSFET N-Chan 600V 22 Amp

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SeekIC No. : 00158871 Detail

IRFP22N60K: MOSFET N-Chan 600V 22 Amp

IRFP22N60K Data Sheet

floor Price/Ceiling Price

US $ 6.17~7.01 / Piece | Get Latest Price
Part Number:
IRFP22N60K
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 0~331
  • 331~500
  • 500~1000
  • Unit Price
  • $7.01
  • $6.43
  • $6.17
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

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Upload time: 2025/12/5

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 22 A
Resistance Drain-Source RDS (on) : 0.28 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247AC Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 22 A
Drain-Source Breakdown Voltage : 600 V
Package / Case : TO-247AC
Resistance Drain-Source RDS (on) : 0.28 Ohms


Application

 Hard Switching Primary or PFS Switch
Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply
High Speed Power Switching
Motor Drive


Specifications

Parameter
Max.
Units
ID @ TC = 25°C
 Continuous Drain Current, VGS @ -10V
22
A
ID @ TC = 100°C
 Continuous Drain Current, VGS @ -10V
14
IDM
 Pulsed Drain Current 
88
PD @TC = 25°C
 Power Dissipation
370
W
 Linear Derating Factor
2.9
W/°C
VGS
 Gate-to-Source Voltage
±30
V
dv/dt
 Peak Diode Recovery dv/dt
15
V/ns
TJ
 Operating Junction and
-55 to + 150
°C

TSTG

 Storage Temperature Range
 Soldering Temperature, for 10 seconds (1.6mm from case )
300



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