Features: •Avalanche Rugged Technology•Rugged Gate Oxide Technology•Lower Input Capacitance•Improved Gate Charge•Extended Safe Operating Area•Lower Leakage Current : 10 A (Max.) @ VDS = 200V•Lower RDS(ON) : 0.144 (Typ.)Specifications Symbol Param...
IRFP240A: Features: •Avalanche Rugged Technology•Rugged Gate Oxide Technology•Lower Input Capacitance•Improved Gate Charge•Extended Safe Operating Area•Lower Leakage Curren...
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|
Symbol |
Parameter |
Value |
Units |
|
VDSS |
Drain-to-Source Voltage |
200 |
V |
|
ID |
Continuous Drain Current (TC=25 ) Continuous Drain Current (TC=100 ) |
20 12.7 |
A |
|
IDM |
Drain Current-Pulsed Gate-to-Source Voltage |
80 |
W/ |
|
VGS |
Gate-to-Source Voltage |
±30 |
V |
|
EAS |
Single Pulse Avalanche Energy |
267 |
mJ |
|
IAR |
Avalanche Current |
20 |
A |
|
EAR |
Repetitive Avalanche Energy |
18 |
mJ |
|
dV/dt |
Peak Diode Recovery dv/dt |
5.0 |
V/ns |
|
PD |
Total Power Dissipation (TC=25 ) Linear Derating Factor |
180 1.45 |
W |
|
TJ |
Operating Junction |
-55 to 200 |
|
|
TSTG |
Storage Temperature Range | ||
|
TL |
Maximum Lead Temp. for Soldering Purposes, 1/8 " from case for 5-seconds |
300 |