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IRFP250

MOSFET N-Chan 200V 30 Amp

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SeekIC No. : 00151292 Detail

IRFP250: MOSFET N-Chan 200V 30 Amp

IRFP250 Data Sheet

floor Price/Ceiling Price

US $ 4.31~6.47 / Piece | Get Latest Price
Part Number:
IRFP250
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $6.47
  • $5.27
  • $4.83
  • $4.31
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 30 A
Resistance Drain-Source RDS (on) : 0.085 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247AC Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 200 V
Continuous Drain Current : 30 A
Package / Case : TO-247AC
Resistance Drain-Source RDS (on) : 0.085 Ohms


Features:

• 33A, 200V
• rDS(ON) = 0.085
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

IRFP250 UNITS
Drain to Source Voltage (Note 1) VDS 200 V
Drain to Gate Voltage (RGS = 20k) (Note 1) VDGR 200 V
Continuous Drain Current ID 33 A
TC = 100 ID 21 A
Pulsed Drain Current (Note 3) IDM 130 A
Gate to Source Voltage VGS ±20 V
Maximum Power Dissipation PD 180 W
Linear Derating Factor 1.44 W/
Single Pulse Avalanche Energy Rating (Note 4) EAS 810 mJ
Operating and Storage Temperature TJ, TSTG -55 to 150
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s TL 300
Package Body for 10s, See Techbrief 334 Tpkg 260
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25to 125.


Parameters:

Technical/Catalog InformationIRFP250
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C33A
Rds On (Max) @ Id, Vgs85 mOhm @ 16A, 10V
Input Capacitance (Ciss) @ Vds 2850pF @ 25V
Power - Max180W
PackagingTube
Gate Charge (Qg) @ Vgs158nc @ 10V
Package / CaseTO-247-3
FET FeatureStandard
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IRFP250
IRFP250
497 2639 5 ND
49726395ND
497-2639-5



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