IRFP250N

The IRFP250N is Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Features of the IRFP250N are:(1)advanced process technology; (2)dynamic dv/dt rating; (3)175°c operating temperature; (4)fast switching; (5)fully avalanche rated; (6)ease of paralleling; (7)simple drive requirements.

The absolute maximum ratings of the IRFP250N can be summarized as:(1)Continuous Drain Current, VGS @ 10V :30A; (2)Continuous Drain Current, VGS @ 10V:21 A; (3)Pulsed Drain Current:120A; (4)Power Dissipation :214 W; (5)Linear Derating Factor: 1.4 W/°C; (6)Gate-to-Source Voltage: ± 20 V; (7)Single Pulse Avalanche Energy:315 mJ; (8)Avalanche Current:30 A; (9)Repetitive Avalanche Energy:21 mJ; (10)Peak Diode Recovery dv/dt:8.6 V/ns; (11)TJ Operating Junction and Storage Temperature Range: -55 to +175°C; (12)Soldering Temperature, for 10 seconds: 300 (1.6mm from case )°C; (13)Mounting torque, 6-32 or M3 srew :10 lbf.in (1.1N.m)°C.If you want to know more information such as the electrical characteristics about the BF904, please download the datasheet in www.seekic.com or www.chinaicmart.com.