IRFP260NPBF

MOSFET MOSFT 200V 49A 40mOhm 156nCAC

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IRFP260NPBF: MOSFET MOSFT 200V 49A 40mOhm 156nCAC

floor Price/Ceiling Price

US $ 1.15~2.37 / Piece | Get Latest Price
Part Number:
IRFP260NPBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $2.37
  • $1.62
  • $1.21
  • $1.15
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Upload time: 2024/2/26

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 50 A
Resistance Drain-Source RDS (on) : 40 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-247AC Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 50 A
Drain-Source Breakdown Voltage : 200 V
Package / Case : TO-247AC
Resistance Drain-Source RDS (on) : 40 mOhms


Features:

` Advanced Process Technology
` Dynamic dv/dt Rating
` 175 Operating Temperature
` Fast Switching
` Fully Avalanche Rated
` Ease of Paralleling
` Simple Drive Requirements
    TO-247AC
    PD - 95010
` Lead-Free



Specifications

Parameter
Max.
Units
ID @ TC = 25 Continuous Drain Current,VGS @ 10V
50
A
ID @ TC = 100 Continuous Drain Current,VGS @ 10V
35
IDM Pulsed Drain Current
200
PD @ TC = 25 Max. Power Dissipation
300
W
Linear Derating Factor
2.0
W/
VGS Gate-to-Source Voltage
±20
V
EAS Single Pulse Avalanche Energy
560
mJ
IAR Avalanche Current
50
A
EAR Repetitive Avalanche Energy
30
mJ
dv/dt Peak Diode Recovery dv/dt
10
V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to 175
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew
10 lbf`in (1.1N`m)



Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processingtechniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design thatHEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-247 package is preferred for commercial-industrial applications wherehigher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.




Parameters:

Technical/Catalog InformationIRFP260NPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C50A
Rds On (Max) @ Id, Vgs40 mOhm @ 28A, 10V
Input Capacitance (Ciss) @ Vds 4057pF @ 25V
Power - Max300W
PackagingBulk
Gate Charge (Qg) @ Vgs234nC @ 10V
Package / CaseTO-247-3 (TO-247AC, Straight Leads)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRFP260NPBF
IRFP260NPBF



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