IRFP26N60LPBF

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Package / Case : TO-247AC
Continuous Drain Current : 26 A
Resistance Drain-Source RDS (on) : 0.21 Ohms


Features:






Specifications






Description

      IRFP26N60LPbF is a kind of power MOSFET.Here you can get some information about the features and benefits.First,superfast body diode eliminates the need for external diodes in ZVS applications.Secondly,lower gate charge results in simpler drive requirements.Besides,enhanced dv/dt capabilities offer improved ruggedness.At last,higher gate voltage threshold offers improved noise immunity.The typical applications include Zero Voltage Switching SMPS,telecom and server power supplies,uninterruptible power supplies and motor control applications.
      The following is about the absolute maximum ratings of IRFP26N60LPbF.The maximum V_GS (gate-source voltage) is ±30 V.The maximum I_D (continuous drain current) is 26 A at T_C=25,V_GS=10 V and 17 A at T_C=100,V_GS=10 V.The maximum I_DM (pulsed drain current) is 100 A.The maximum P_D (power dissipation) is 470 W at T_C=25.The maximum dv/dt (peak diode recovery dv/dt) is 21 V/ns.The T_J and T_STG (operating junction and storage temperature range) are both from -55 to +150.The soldering temperature for 10 seconds is 300 (1.6mm from case).
      There are the static electrical characteristics of IRFP26N60LPbF  at T_J=25.The minimum V_(BR)DSS (drain-to-source breakdown voltage) is 600 V at V_GS=0 V,I_D=250A.The typical V_(BR)DSS/T_J (breakdown voltage temperature coefficient) is 0.33 V/ at reference to 25 and I_D=1 mA.The typical R_DS(on) (static drain-to-source on-resistance) is 210m and the maximum is 250m at V_GS=10 V,I_D=16 A.The minimum V_GS(th) (gate threshold voltage) is 3.0 V and the maximum is 5.0 V at V_DS=V_GS,I_D=250A.The maximum I_DSS (drain to source leakage current) is 50A at V_DS=600 V,V_GS=0 V and is 2.0 mA at V_DS=480 V,V_GS=0 V,T_J=125.The maximum (I_GSS) (gate-to-source forward leakage) is 100 nA at V_GS=30 V and the (I_GSS) (gate-to-source reverse leakage) is -100 nA at V_GS=-30 V.The typical R_G (internal gate resistance) is 0.8 at f=1MHz,open gain.