IRFP354

Manufacturer: Vishay Siliconix
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Current - Continuous Drain (Id) @ 25° C: 14A
Packaging: Tube
Mounting Type: Through Hole
Gate Charge (Qg) @ Vgs: 160nC @ 10V
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Power - Max: 190W
Input Capacitance (Ciss) @ Vds: 2700pF @ 25V
Drain to Source Voltage (Vdss): 450V
Rds On (Max) @ Id, Vgs: 350 mOhm @ 8.4A, 10V


Features:






Specifications






Description

The IRFP354 has six features.The first one is dynamic dv/dt rating.The second one is repetitive avalanche rated.The third one is isolated central mounting hole.The fourth one is fast switching.The fifth one is ease of paralleling.The sixth one simple drive requirements.

Third generation HEXFETs of the IRFP354 from international rectifier provide the designer with the best combination of fast switching,ruggedized device design,low on-resistance and cost-effectiveness.The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices.The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.It also provides greater creepage distance between pins to meet the requirements of most safety specifications.

The IRFP354 has some absolute maximum ratings.When parameter is continuous drain current,VGS @ 10V,the symbol is ID@TC=25,the Max. is 14,the units is A.When parameter is continuous drain current,VGS @ 10V,the symbol is ID@TC=100,the Max. is 9.1,the units is A.When parameter is pulsed drain current,the symbol is IDM,the Max. is 56,the units is A.When parameter is power dissipation,the symbol is PD@TC=25,the Max. is 190,the units is W.When parameter is junction and storage temperature range,the Max. is -55 to +150,the units is .When parameter is soldering temperature,for 10 seconds,the Max. is 300(1.6mm from case),the units is .