IRFP360PBF

MOSFET N-Chan 400V 23 Amp

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IRFP360PBF Picture
SeekIC No. : 00146158 Detail

IRFP360PBF: MOSFET N-Chan 400V 23 Amp

floor Price/Ceiling Price

US $ 1.5~2.27 / Piece | Get Latest Price
Part Number:
IRFP360PBF
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $2.27
  • $1.82
  • $1.66
  • $1.5
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 400 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 23 A
Resistance Drain-Source RDS (on) : 200 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247AC Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-247AC
Continuous Drain Current : 23 A
Drain-Source Breakdown Voltage : 400 V
Resistance Drain-Source RDS (on) : 200 mOhms


Features:






Specifications






Description

      The IRFP360PbF is designed as power MOSFET.It provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
      The IRFP360PbF has seven features.The first one is that it would have dynamic dv/dt rating.The second one is that it would be repetitive avalanche rated.The third one is that it would have isolated central mounting hole.The fourth one is that it would have fast switching.The fifth one is that it would have ease of paralleling.The sixth one is that it would have simple drive requirements.The last one is that it would be lead free.That are all the features.
      Some absolute maximum ratings of IRFP360PbF have been concluded into several points as follow.The first one is about its continuous drain current, Vgs @ 10V, Tc=25°C which would be 23A.The second one is about its continuous drain current, Vgs @ 10V, Tc=100°C which would be 14A.The third one is about its pulse drain current which would be 92A.The fourth one is about its power dissipation which would be 280W.The fifth one is about its linear derating factor which would be 2.2W/°C.The sixth one is about its gate-to source voltage which would be +/-20V.The seventh one is about its signal pulse avalanche energy which would be 1200mJ.The eighth one is about its peak diode recovery dv/dt which would be 4.0 V/ns.The next one is about its operating junction and storage temperature range which would be from -55 to +150°C.The next one is about its soldering temperature, for 10 sec which would be 300°C.
      And also there are some electrical characteristics @ Tj=25°C (unless otherwise specified) about IRFP360PbF.The first one is about its drain to source breakdown voltage which would be min 400V with condition of Vgs=0V, Id=250uA.The second one is about its breakdown voltage temp. coefficient which would be typ 0.56V/°C.The third one is about its static drain to source on resistance which would be max 0.20 with condition of Vgs=10V, Id=14A.And so on.For more information please contact us.






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