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MFG:IR  Package Cooled:TO-3P  D/C:09+  

IRFP3710 Product Image

IRF Series Datasheet download

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Part Number: IRFP3710

 

MFG: IR

Package Cooled: TO-3P

D/C: 09+

Description: Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achiev...


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IRFP3710 General Description


Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-247 package is preferred for commercialindustrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.

IRFP3710 Maximum Ratings

  Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V …
57
A
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V …
40
IDM
Pulsed Drain Current …
180
PD @TC = 25°C
Power Dissipation
200
W
Linear Derating Factor
1.3
W/°C
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy…
530
mJ
IAR
Avalanche Current…
28
A
EAR
Repetitive Avalanche Energy
20
mJ
dv/dt
Peak Diode Recovery dv/dt …
5.0
V/ns
TJ
TSTG
Operating Junction and Storage Temperature Range
-55 to + 175
°C
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
  Mounting torque, 6-32 or M3 srew
10 lbf•in (1.1N•m)

IRFP3710 Features

·Advanced Process Technology
·Dynamic dv/dt Rating
·175°C Operating Temperature
· Fast Switching
·Fully Avalanche Rated

IRFP3710 datasheet

IRFP3710
PDF/DataSheet Download

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