Transistor Polarity
: N-Channel
Configuration
: Single
Maximum Operating Temperature
: + 175 C
Mounting Style
: Through Hole
Packaging
: Tube
Drain-Source Breakdown Voltage
: 200 V
Gate-Source Breakdown Voltage
: +/- 30 V
Resistance Drain-Source RDS (on)
: 25 mOhms
Package / Case
: TO-247AC
Continuous Drain Current
: 65 A
Features: · Advanced Process Technology
· Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications
· Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications
· Low QG for Fast Response
· High Repetitive Peak Current Capability for Reliable Operation
· Short Fall & Rise Times for Fast Switching
·175°C Operating Junction Temperature for Improved Ruggedness
· Repetitive Avalanche Capability for Robustness and Reliability· Advanced Process Technology
· Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications
· Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications
· Low QG for Fast Response
· High Repetitive Peak Current Capability for Reliable Operation
· Short Fall & Rise Times for Fast Switching
·175°C Operating Junction Temperature for Improved Ruggedness
· Repetitive Avalanche Capability for Robustness and ReliabilityDescriptionThe IRFP4227PbF is one kind of power MOSFET which designed for sustain;energy recovery and pass switch applications in plasma display panels.It utilizes the latest processing techniques to achieve low on-resistance per silicon area and low Epulse rating.Additional features of this MOSFET are 175 operating junction temperature and high repetitive peak current capability.These features combine to make this MOSFET a highly efficient,robust and reliable device for PDP driving applications.
Features of the IRFP4227PbF are:(1)advanced process technology;(2)key parameters optimized for PDP sustain, energy recovery and pass switch applicat-ions;(3)low Qg for fast response;(4)high repetitive peak current capability for reliable operation;(5)short fall & rise times for fast switching;(6)175°C operating junction temperature for improved ruggedness;(7)repetitive avalanche capability for robustness and reliability.
The absolute maximum ratings of the IRFP4227PbF can be summarized as:(1)gate-to-source voltage:±30 V;(2)pulsed drain current:260 A;(3)repetitive peak current:130 A;(4)mounting torque, 6-32 or M3 screw:10lb in (1.1N.m) N;(5)soldering temperature for 10 seconds:300;(6)operating junction and storage temperature range:-40 to + 175.If you want to know more information such as the electrical characteristics about the IRFP4227PbF,please download the datasheet in www.seekic.com or www.chinaicmart.com.
Parameters: | Technical/Catalog Information | IRFP4227PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25° C | 65A |
| Rds On (Max) @ Id, Vgs | 25 mOhm @ 46A, 10V |
| Input Capacitance (Ciss) @ Vds | 4600pF @ 25V |
| Power - Max | 330W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 98nC @ 10V |
| Package / Case | TO-247AC |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRFP4227PBF
IRFP4227PBF
|
IRFP4227PBF Data Sheet
