Transistor Polarity
: N-Channel
Configuration
: Single
Maximum Operating Temperature
: + 175 C
Mounting Style
: Through Hole
Packaging
: Tube
Drain-Source Breakdown Voltage
: 250 V
Continuous Drain Current
: 44 A
Gate-Source Breakdown Voltage
: +/- 30 V
Package / Case
: TO-247AC
Resistance Drain-Source RDS (on)
: 46 mOhms
Features: ` Advanced Process Technology
` Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications
` Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain,
Energy Recovery and Pass Switch Applications
` Low QG for Fast Response
` High Repetitive Peak Current Capability for Reliable Operation
` Short Fall & Rise Times for Fast Switching
`175 Operating Junction Temperature for Improved Ruggedness
` Repetitive Avalanche Capability for Robustness and ReliabilitySpecifications
| Symbol |
Parameter |
Max. |
Units |
| VDS |
Drain-Source Voltage |
±30 |
V |
| ID @ TC = 25 |
Continuous Drain Current, VGS @ 10V |
44 |
A |
| ID @ TC = 70 |
Continuous Drain Current, VGS @ 10V |
31 |
| IDM |
Pulsed Drain Current |
180 |
| IRP @ TC = 100 |
Repetitive Peak Current |
87 |
| PD @TC = 25 |
Power Dissipation |
310 |
W |
| PD @TC = 100 |
Power Dissipation |
150 |
| |
Linear Derating Factor |
2.0 |
W/ |
| TJ , TSTG |
Operating Junction and Storage Temperature Range |
-40 to + 175 |
|
| |
Soldering Temperature for 10 seconds |
300 |
|
| |
Mounting Torque, 6-32 or M3 Screw |
10lbin(1.1N.m) |
N |
DescriptionThis HEXFET@ Power MOSFET of the IRFP4229PbF is specifically designed for Sustain;Energy Recovery Pass switch applications in Plasma Display Panels.This MOSFET utilizes the latest processing techniques to achieve low on-resistance persilicon area and low EPULSE rating..Additional features or this MOSFET are 175 operating junction temperature and high repetitive peak current capability.These features combine to make this MOSFET a highly efficient,robust and reliable device for PDP driving applications.
Parameters: | Technical/Catalog Information | IRFP4229PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 250V |
| Current - Continuous Drain (Id) @ 25° C | 44A |
| Rds On (Max) @ Id, Vgs | 46 mOhm @ 26A, 10V |
| Input Capacitance (Ciss) @ Vds | 4560pF @ 25V |
| Power - Max | 310W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 110nC @ 10V |
| Package / Case | TO-247AC |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRFP4229PBF
IRFP4229PBF
|
IRFP4229PBF Data Sheet
