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MFG:TO-247AC  Package Cooled:7850  D/C:IR  

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Part Number: IRFP4229PbF

 

MFG: TO-247AC

Package Cooled: 7850

D/C: IR

Description: This HEXFET@ Power MOSFET is specifically designed for Sustain;Energy Recovery Pass switch applications in P...


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IRFP4229PbF General Description


This HEXFET@ Power MOSFET is specifically designed for Sustain;Energy Recovery Pass switch applications in Plasma Display Panels.This MOSFET utilizes the latest processing techniques to achieve low on-resistance persilicon area and low EPULSE rating..Additional features or this MOSFET are 175 operating junction temperature and high repetitive peak current capability.These features combine to make this MOSFET a highly efficient,robust and reliable device for PDP driving applications.

IRFP4229PbF Maximum Ratings

Symbol Parameter Max. Units
VDS Drain-Source Voltage ±30 V
ID @ TC = 25 Continuous Drain Current, VGS @ 10V 44 A
ID @ TC = 70 Continuous Drain Current, VGS @ 10V 31
IDM Pulsed Drain Current 180
IRP @ TC = 100 Repetitive Peak Current 87
PD @TC = 25 Power Dissipation 310 W
PD @TC = 100 Power Dissipation 150
  Linear Derating Factor 2.0 W/
TJ , TSTG Operating Junction and Storage Temperature Range -40 to + 175  
  Soldering Temperature for 10 seconds 300  
  Mounting Torque, 6-32 or M3 Screw 10lbin(1.1N.m) N

IRFP4229PbF Features

` Advanced Process Technology
` Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications
` Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain,
    Energy Recovery and Pass Switch Applications
` Low QG for Fast Response
` High Repetitive Peak Current Capability for Reliable Operation
` Short Fall & Rise Times for Fast Switching
`175 Operating Junction Temperature for Improved Ruggedness
` Repetitive Avalanche Capability for Robustness and Reliability

IRFP4229PbF datasheet

IRF034
PDF/DataSheet Download

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