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IRFP4232PBF

MOSFET

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SeekIC No. : 00156663 Detail

IRFP4232PBF: MOSFET

IRFP4232PBF Data Sheet

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US $ 1.6~1.6 / Piece | Get Latest Price
Part Number:
IRFP4232PBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~2990
  • Unit Price
  • $1.6
  • Processing time
  • 15 Days
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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 250 V
Gate-Source Breakdown Voltage : 20 V Continuous Drain Current : 60 A
Resistance Drain-Source RDS (on) : 35.7 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-247AC Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Drain-Source Breakdown Voltage : 250 V
Gate-Source Breakdown Voltage : 20 V
Continuous Drain Current : 60 A
Package / Case : TO-247AC
Resistance Drain-Source RDS (on) : 35.7 m Ohms


Features:

` Advanced process technology
` Key parameters optimized for PDP Sustain & Energy Recovery applications
` Low EPULSE rating to reduce the power dissipation in Sustain & ER applications
` Low QG for fast response
` High repetitive peak current capability for reliable operation
` Short fall & rise times for fast switching
` 175 operating junction temperature for improved ruggedness
` Repetitive avalanche capability for robustness and reliability


Specifications

  Parameter Max. Units
VGS Gate-to-Source Voltage ±20 V
VGS (TRANSIENT) Gate-to-Source Voltage ±30
ID @ TC = 25 Continuous Drain Current, VGS @ 10V 60 A
ID @ TC = 100 Continuous Drain Current, VGS @ 10V 42
IDM Pulsed Drain Current 240
IRP @ TC = 100 Repetitive Peak Current 117
PD @TC = 25 Power Dissipation 430 W
PD @TC = 100 Power Dissipation 210
  Linear Derating Factor 2.9 W/
TJ
TSTG		 Operating Junction and
Storage Temperature Range		 -40 to + 175
  Soldering Temperature for 10 seconds 300
  Mounting Torque, 6-32 or M3 Screw 10lb`in (1.1N`m) N
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Half sine wave with duty cycle = 0.25, ton=1sec.


Parameters:

Technical/Catalog InformationIRFP4232PBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25° C60A
Rds On (Max) @ Id, Vgs35.7 mOhm @ 42A, 10V
Input Capacitance (Ciss) @ Vds 7290pF @ 25V
Power - Max430W
PackagingBulk
Gate Charge (Qg) @ Vgs240nC @ 10V
Package / CaseTO-247-3 (TO-247AC, Straight Leads)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRFP4232PBF
IRFP4232PBF



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