MFG:TO-247AC Package Cooled:7850 D/C:IR
MFG: TO-247AC
Package Cooled: 7850
D/C: IR
Description: This HEXFET ®Power MOSFET is specifically designde for Sustain; Energy Recovery & Pass switch app...
This HEXFET ®Power MOSFET is specifically designde for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing technques to achieve low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175 operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable devive for PDP driving applications.
|
Parameter |
Max. |
Units | |
| VGS | Gate-to-Source Voltage |
±30 |
V |
| ID @ TC = 25 | Continuous Drain Current, VGS @ 10V |
46 |
A |
| ID @ TC = 100 | Continuous Drain Current, VGS @ 10V |
33 | |
| IDM | Pulsed Drain Current |
190 | |
| IRP @ TC = 100 | Repetitive Peak Current |
93 | |
| PD @TC = 25 | Power Dissipation |
430 |
W |
| PD @TC = 100 | Power Dissipation |
210 | |
| Linear Derating Factor |
2.9 |
W/ | |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-40 to + 175 |
|
| Soldering Temperature for 10 seconds |
300 | ||
| Mounting Torque, 6-32 or M3 Screw |
10lb`in (1.1N`m) |
N |
` Advanced process technology
` Key parameters optimized for PDP Sustain & Energy Recovery applications
` Low EPULSE rating to reduce the power dissipation in Sustain & ER applications
` Low QG for fast response
` High repetitive peak current capability for reliable operation
` Short fall & rise times for fast switching
`175 operating junction temperature for improved ruggedness
` Repetitive avalanche capability for robustness and reliability
IRF034
PDF/DataSheet Download
MOSFET N-CH 250V 60A TO-247AC
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