Transistor Polarity
: N-Channel
Configuration
: Single
Maximum Operating Temperature
: + 175 C
Mounting Style
: Through Hole
Packaging
: Tube
Gate-Source Breakdown Voltage
: 30 V
Continuous Drain Current
: 46 A
Package / Case
: TO-247AC
Drain-Source Breakdown Voltage
: 300 V
Resistance Drain-Source RDS (on)
: 59 m Ohms
Features: ` Advanced process technology
` Key parameters optimized for PDP Sustain & Energy Recovery applications
` Low EPULSE rating to reduce the power dissipation in Sustain & ER applications
` Low QG for fast response
` High repetitive peak current capability for reliable operation
` Short fall & rise times for fast switching
`175 operating junction temperature for improved ruggedness
` Repetitive avalanche capability for robustness and reliability
Specifications
| |
Parameter |
Max. |
Units |
| VGS |
Gate-to-Source Voltage |
±30 |
V |
| ID @ TC = 25 |
Continuous Drain Current, VGS @ 10V |
46 |
A |
| ID @ TC = 100 |
Continuous Drain Current, VGS @ 10V |
33 |
| IDM |
Pulsed Drain Current |
190 |
| IRP @ TC = 100 |
Repetitive Peak Current |
93 |
| PD @TC = 25 |
Power Dissipation |
430 |
W |
| PD @TC = 100 |
Power Dissipation |
210 |
| |
Linear Derating Factor |
2.9 |
W/ |
TJ
TSTG |
Operating Junction and
Storage Temperature Range |
-40 to + 175 |
|
| |
Soldering Temperature for 10 seconds |
300 |
| |
Mounting Torque, 6-32 or M3 Screw |
10lb`in (1.1N`m) |
N |
DescriptionThis HEXFET ®Power MOSFET of the IRFP4242PbF is specifically designde for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing technques to achieve low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175 operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable devive for PDP driving applications.
Parameters: | Technical/Catalog Information | IRFP4242PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 300V |
| Current - Continuous Drain (Id) @ 25° C | 46A |
| Rds On (Max) @ Id, Vgs | 59 mOhm @ 33A, 10V |
| Input Capacitance (Ciss) @ Vds | 7370pF @ 25V |
| Power - Max | 430W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 247nC @ 10V |
| Package / Case | TO-247AC |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRFP4242PBF
IRFP4242PBF
|
IRFP4242PBF Data Sheet
