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| Parameter | Max. | Units | |
| ID @ TC = 25 | Continuous Drain Current, VGS @ 10V(Silicon Limited) | 350 | A |
| ID @ TC = 100 | Continuous Drain Current, VGS @ 10V(Silicon Limited) | 250 | |
| ID @ TC = 25 | Continuous Drain Current, VGS @ 10V (Wire Bond Limited) | 195 | |
| IDM | Pulsed Drain Current | 1280 | |
| PD @ TC = 25 | Max. Power Dissipation | 520 | W |
| Linear Derating Factor | 3.4 | W/ | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
| TJ, TSTG | Junction and Storage Temperature Range | -55 to 175 | |
| Soldering Temperature, for 10 seconds (1.6mm from case) |
300 | ||
| Mounting torque, 6-32 or M3 screw | 10 lb`in (1.1N`m) |
IRF034
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