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MFG:Fairchild  

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Part Number: IRFP440B

 

MFG: Fairchild

 

 

Description: These N-Channel enhancement mode power field effect transistors are produced using Fairchild!'s propri...


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IRFP440B General Description


These N-Channel enhancement mode power field effect transistors are produced using Fairchild!'s proprietary planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge.

IRFP440B Maximum Ratings

Symbol
Parameter
IRFP250B
Units
VDSS
 Drain-Source Voltage
500
V
ID
 Drain Current
- Continuous (TC= 25)
- Continuous (TC= 100)
8.5
5.4
A
A
IDM
VGSS
EAS
IAR
EAR
dv/dt
 Drain Current- Pulsed(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy(Note 2)
Avalanche Current(Note 1)
Repetitive Avalanche Energy(Note 1)
Peak Diode Recovery dv/dt(Note 3)
34
±30
320
8.5
16.2
5.5
A
V
mJ
A
mJ
V/ns
W
PD
 Power Dissipation (TC= 25)
- Derate above 25
162
1.3
W/
TJ,TSTG
 Operating and Storage Temperature Range
-55 to +150
TL
 Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
 
Parameter
Typ.
Max.
Units
RJC
RCS
RJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
-
0.24
-
0.77
-
40
/W

IRFP440B Features

`8.5A, 500V, RDS(on)  = 0.8 @VGS = 10 V
`Low gate charge ( typical  41 nC)
`Low Crss ( typical  35 pF)
`Fast switching
`100% avalanche tested
`Improved dv/dt capability

IRFP440B datasheet

IRF034
PDF/DataSheet Download

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