MOSFET MOSFT 100V 290A 2.6mOhm 360nC Qg
IRFP4468PBF: MOSFET MOSFT 100V 290A 2.6mOhm 360nC Qg
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V |
| Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 290 A |
| Mounting Style : | Through Hole | Package / Case : | TO-247AC |
| Packaging : | Tube |
| Symbol | Parameter | Max. | Units |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 290 | A |
| ID TC =100°C | Continuous Drain Current, VGS @ 10V | 200 | A |
| IDM | Pulsed Drain Current | 195 | A |
| PD @ TC = 25 | Maximum Power Dissipation | 1120 | W |
| Linear Derating Factor |
520 |
W | |
| VGS | Gate-to-Source Voltage | 3.4 | W/ |
| dv/dt | Peak Diode Recovery | ±20 | |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | |
| Soldering Temperature, for 10 seconds (1.6mm from case) |
300 | ||
| Mounting torque, 6-32 or M3 screw | 10lb in (1.1N m) |
| Technical/Catalog Information | IRFP4468PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 195A |
| Rds On (Max) @ Id, Vgs | 2.6 mOhm @ 180A, 10V |
| Input Capacitance (Ciss) @ Vds | 19860pF @ 50V |
| Power - Max | 520W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 540nC @ 10V |
| Package / Case | TO-247AC |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRFP4468PBF IRFP4468PBF |