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Part Number: IRFP450

 

 

 

 

Description: This power MOSFET is designed using the company's consolidated strip layout-based MESH OVERLAY] proces...


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IRFP450 General Description


This power MOSFET is designed using the company's consolidated strip layout-based MESH OVERLAY] process. This technology matches and improves the performances compared with standard parts from various sources.

IRFP450 Maximum Ratings

Symbol
Parameter
Value
Uni t
VDS
 Drain-source Voltage (VGS = 0)
500
V
VDGR
 Drain- gate Voltage (RGS = 20 k)
500
V
VGS
 Gate-source Voltage
± 20
V
ID
 Drain Current (continuous) at Tc = 25 °C
14
A
ID
 Drain Current (continuous) at Tc = 100 °C
8.7
A
IDM(•)
 Drain Current (pulsed)
56
A
Ptot
 Total Dissipation at Tc = 25 oC
190
W
 Derating Factor
1.5
W/°C
dv/dt(1)
 Peak Diode Recovery voltage slope
3.5
V/ns
Tstg
 Storage Temperature
-65 to 150
°C
Tj
 Max. Operating Junction Temperature
150
°C


(•) Pulse width limited by safe operating area           (1) ISD 14 A, di/dt  130 A/s, VDD  V(BR)DSS, Tj  TJMAX

IRFP450 Features

` TYPICAL RDS(on) = 0.33
` EXTREMELY HIGH dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` VERYLOW INTRINSIC CAPACITANCES
` n GATECHARGE MINIMIZED

IRFP450 Typical Application

· HIGH CURRENT SWITCHING
· UNINTERRUPTIBLE POWER SUPPLY (UPS)
· DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT.

IRFP450 datasheet

IRFP450
PDF/DataSheet Download

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