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Part Number: IRFP450LC

 

 

 

 

Description: This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conven...


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IRFP450LC General Description


This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. These device improvements combined with the proven ruggedness and reliability of HEXFETs offer the designer a new standard in power transistors for switching applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.

IRFP450LC Maximum Ratings

Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, V GS @ 10V
14
A
ID @ TC = 100°C
Continuous Drain Current, V GS @ 10V
8.6
IDM
Pulsed Drain Current
56
PD @TC = 25°C
Power Dissipation
190
W
Linear Derating Factor
1.5
W/°C
VGS
Gate-to-Source Voltage
±30
V
EAS
Single Pulse Avalanche Energy
760
mJ
IAR
Avalanche Current
14
A
EAR
Repetitive Avalanche Energy
19
mJ
dv/dt
Peak Diode Recovery dv/dt
3.5
V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 150
°C
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw.
10 lbf•in (1.1N•m)

IRFP450LC Features

·Ultra Low Gate Charge
·Reduced Gate Drive Requirement
·Enhanced 30V Vgs Rating
·Reduced Ciss, Coss, Crss
·Isolated Central Mounting Hole
·Dynamic dv/dt Rated
·Repetitive Avalanche Rated

IRFP450LC datasheet

IRFP450LC
PDF/DataSheet Download

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