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IRFP470

MOSFET 24 Amps 500V 0.23 Rds

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SeekIC No. : 00164466 Detail

IRFP470: MOSFET 24 Amps 500V 0.23 Rds

IRFP470 Data Sheet

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Part Number:
IRFP470
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 24 A
Resistance Drain-Source RDS (on) : 0.23 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247AD Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Continuous Drain Current : 24 A
Resistance Drain-Source RDS (on) : 0.23 Ohms
Package / Case : TO-247AD


Features:

·International standard packages
·Low RDS (on) HDMOSTM process
·Rugged polysilicon gate cell structure
·High commutating dv/dt rating
·Fast switching times


Application

·Switch-mode and resonant-mode power supplies
·Motor controls
·Uninterruptible Power Supplies (UPS)
·DC choppers


Specifications

 
             Symbo
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°
500
V
VDGR
TJ = 25°C to 150°C; RGS = 1 M
500
V
VGS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
TC = 25°C
24
A
IDM
TC = 25°C, pulse width limited by TJM
96
A
IAR
24
A
EAR
TC = 25°C
30
mJ
dv/dt
IS IDM, di/dt 100 A/s, VDD VDSS,TJ 150°C, RG = 2
5
V/ns
PD
TC = 25°C
300
W
TJ
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
Md
Mounting torque
1.13/10
Nm/lb.in.
Weight
6
g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°C



Parameters:

Technical/Catalog InformationIRFP470
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C24A
Rds On (Max) @ Id, Vgs230 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 4200pF @ 25V
Power - Max300W
PackagingTube
Gate Charge (Qg) @ Vgs190nC @ 10V
Package / CaseTO-247AD
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRFP470
IRFP470



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