IRFP9140NPBF

Resistance Drain-Source RDS (on) :
Configuration :
Maximum Operating Temperature :
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Packaging : Tube
Gate-Source Breakdown Voltage : 20 V
Package / Case : TO-247AC
Drain-Source Breakdown Voltage : - 100 V
Continuous Drain Current : - 21 A


Features:






Specifications






Description

The features of IRFP9140NPbF are Advanced Process Technology, Dynamic dv/dt Rating, 175 Operating Temperature, P-Channel, Fast Switching, Fully Avalanche Rated, Lead-Free.

The IRFP9140NPbF is a kind of HEXFET power mosfet, and the fifth generation HEXFETs from International Rectiher utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely eihcient and reliable device for use in a wide variety of applications.

The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-215 package because of its isolated mounting hole.

The parameters of the IRFP9140NPbF are VGS (Gate-to-Source Voltage)=±20V, ID @ Tc= 25°C  (Continuous Drain Current, VGS @ -10V)=-23A, ID @ Tc = 100°C (Continuous Drain Current, VGS @-10V )=-16A, IDM (Pulsed Drain Current)=-76A, EAS (Single Pulse Avalanche Energy)=430mJ, PD (@Tc= 25°C Power Dissipation)=140W, IAR( Avalanche Current)= -11A, EAR (Repetitive Avalanche Energy)=14mJ, dv/dt( Peak Diode Recovery dv/dt) =-5.0V/ns, TJ (Operating Junction and)= -55 to + 175°C=TSTG( Storage Temperature Range), (Soldering Temperature, for 10 seconds )=300 (1.6mm from case )°C, RJC( Junction-to-Case )=1.1(max)°C/W, RJA (Junction-to-Ambient)= 40(typ)°C/W, RCS(Case-to-sink, flat, greased surface)=0.24(typ)°C/W.

Parameters:

Technical/Catalog Information	IRFP9140NPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	23A
Rds On (Max) @ Id, Vgs	117 mOhm @ 13A, 10V
Input Capacitance (Ciss) @ Vds	1300pF @ 25V
Power - Max	140W
Packaging	Bulk
Gate Charge (Qg) @ Vgs	97nC @ 10V
Package / Case	TO-247-3 (TO-247AC, Straight Leads)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRFP9140NPBF IRFP9140NPBF