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IRFS11N50A

MOSFET N-Chan 500V 11 Amp

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SeekIC No. : 00165345 Detail

IRFS11N50A: MOSFET N-Chan 500V 11 Amp

IRFS11N50A Data Sheet

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Part Number:
IRFS11N50A
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 11 A
Resistance Drain-Source RDS (on) : 0.52 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : D2PAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Package / Case : D2PAK
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 11 A
Resistance Drain-Source RDS (on) : 0.52 Ohms


Application

· Switch Mode Power Supply ( SMPS )
· Uninterruptable Power Supply
· High speed power switching


Specifications

 
Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
11
A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
7.0
IDM Pulsed Drain Current   
44
PD @TC = 25°C Power Dissipation
170
W
  Linear Derating Factor
1.3
W/°C
VGS Gate-to-Source Voltage
± 30
V
dv/dt Peak Diode Recovery dv/dt
6.9
V/ns
TJ
TSTG		 Operating Junction and
Storage Temperature Range
-55 to + 150
°C
  Soldering Temperature, for 10 seconds
300 (1.6mm from case)



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