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IRFU1018EPBF

MOSFET MOSFT 60V 79A 8.4mOhm 46nC Qg

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IRFU1018EPBF: MOSFET MOSFT 60V 79A 8.4mOhm 46nC Qg

IRFU1018EPBF Data Sheet

floor Price/Ceiling Price

US $ .4~1.01 / Piece | Get Latest Price
Part Number:
IRFU1018EPBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $1.01
  • $.62
  • $.42
  • $.4
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/12/4

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : 20 V Continuous Drain Current : 79 A
Mounting Style : Through Hole Package / Case : IPAK
Packaging : Tube    

Description

Resistance Drain-Source RDS (on) :
Configuration :
Maximum Operating Temperature :
Transistor Polarity : N-Channel
Mounting Style : Through Hole
Packaging : Tube
Gate-Source Breakdown Voltage : 20 V
Drain-Source Breakdown Voltage : 60 V
Package / Case : IPAK
Continuous Drain Current : 79 A


Application

High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits


Specifications

  Parameter
Maximum
Units
ID @ TC = 25 Continuous Drain Current, VGS @ 10V (Silicon Limited)
79
A
ID @ TC = 100 Continuous Drain Current, VGS @ 10V (Silicon Limited)
56
ID @ TC = 25 Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
56
IDM Pulsed Drain Current
315
PD @TC= 25 Maximum Power Dissipation
110
W
  Linear Derating Factor
0.76
W/
VGS Gate-to-Source Voltage
± 20
V
dv/dt Peak Diode Recovery
21
mJ
TJ
TSTG		 Operating Junction and
Storage Temperature Range
-55 to + 175
  Soldering Temperature, for 10 seconds
(1.6mm from case)
300



Parameters:

Technical/Catalog InformationIRFU1018EPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C56A
Rds On (Max) @ Id, Vgs8.4 mOhm @ 47A, 10V
Input Capacitance (Ciss) @ Vds 2290pF @ 50V
Power - Max110W
PackagingTube
Gate Charge (Qg) @ Vgs69nC @ 10V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRFU1018EPBF
IRFU1018EPBF



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