IRFU120

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 7.7 A
Package / Case : IPAK
Resistance Drain-Source RDS (on) : 0.27 Ohms


Features:

• 8.4A, 100V
• r_DS(ON) = 0.270
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"

Specifications

Drain to Source Voltage (Note 1)V_DS ..................................100 V
Drain to Gate Voltage (Note 1)V_DGR ...................................100 V
Continuous Drain Current ID ...............................................8.4 A
TC = 100 I_D ......................................................................5.9 A
Pulsed Drain Current (Note 4) I_DM .......................................34 A
Gate to Source Voltage   V_GS ............................................±20 V
Maximum Power Dissipation   P_D .........................................50 W
Linear Derating Factor ................................................. 0.33 W/
Single Pulse Avalanche Rating (Note 3) E_AS ........................36 mj
Operating and Storage Temperature T_J, T_STG......... -55 to 175
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s T_L ..................300
Package Body for 10s, See Techbrief 334 Tpkg .................. 260

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.