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IRFU120_R4941

MOSFET TO-251AA N-Ch Power

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SeekIC No. : 00166200 Detail

IRFU120_R4941: MOSFET TO-251AA N-Ch Power

IRFU120_R4941 Data Sheet

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Part Number:
IRFU120_R4941
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 8.4 A
Resistance Drain-Source RDS (on) : 0.27 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : IPAK    

Description

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Package / Case : IPAK
Resistance Drain-Source RDS (on) : 0.27 Ohms
Continuous Drain Current : 8.4 A


Parameters:

Technical/Catalog InformationIRFU120_R4941
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C8.4A
Rds On (Max) @ Id, Vgs270 mOhm @ 5.9A, 10V
Input Capacitance (Ciss) @ Vds 350pF @ 25V
Power - Max50W
PackagingTube
Gate Charge (Qg) @ Vgs15nC @ 10V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureStandard
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IRFU120_R4941
IRFU120_R4941
IRFU120FS ND
IRFU120FSND
IRFU120FS



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