IRFU12N25D

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Series: HEXFET®
Current - Continuous Drain (Id) @ 25° C: 14A
Drain to Source Voltage (Vdss): 250V
Gate Charge (Qg) @ Vgs: 35nC @ 10V
Packaging: Tube
Mounting Type: Through Hole
Vgs(th) (Max) @ Id: 5V @ 250µA
Manufacturer: International Rectifier
Input Capacitance (Ciss) @ Vds: 810pF @ 25V
Power - Max: 144W
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Supplier Device Package: I-Pak
Rds On (Max) @ Id, Vgs: 260 mOhm @ 8.4A, 10V


Application

High frequency DC-DC converters




Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	14	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	9.7
IDM	Pulsed Drain Current	56
PD @TC = 25°C	Power Dissipation	144	W
	Linear Derating Factor	0.96	W/°C
VGS	Gate-to-Source Voltage	±30	V
dv/dt	Peak Diode Recovery dv/dt	9.3	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55to+175	°C
	Soldering Temperature, for 10 seconds	300(1.6mm from case )

Thermal Resistance

	Parameter	Typ.	Max.	Units
RJC	Junction-to-Case	-	1.04	°C/W
RJA	Junction-to-Ambient (PCB mount) *	-	50
RJA	Junction-to-Ambient	-	110