IRFU12N25DPBF

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Series: HEXFET®
Current - Continuous Drain (Id) @ 25° C: 14A
Drain to Source Voltage (Vdss): 250V
Gate Charge (Qg) @ Vgs: 35nC @ 10V
Packaging: Tube
Mounting Type: Through Hole
Vgs(th) (Max) @ Id: 5V @ 250µA
Manufacturer: International Rectifier
Input Capacitance (Ciss) @ Vds: 810pF @ 25V
Power - Max: 144W
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Supplier Device Package: I-Pak
Rds On (Max) @ Id, Vgs: 260 mOhm @ 8.4A, 10V


Parameters:

Technical/Catalog Information	IRFU12N25DPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	250V
Current - Continuous Drain (Id) @ 25° C	14A
Rds On (Max) @ Id, Vgs	260 mOhm @ 8.4A, 10V
Input Capacitance (Ciss) @ Vds	810pF @ 25V
Power - Max	144W
Packaging	Tube
Gate Charge (Qg) @ Vgs	35nC @ 10V
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRFU12N25DPBF IRFU12N25DPBF