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IRFU1N60A

MOSFET N-Chan 600V 1.4 Amp

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SeekIC No. : 00158692 Detail

IRFU1N60A: MOSFET N-Chan 600V 1.4 Amp

IRFU1N60A Data Sheet

floor Price/Ceiling Price

US $ .85~.9 / Piece | Get Latest Price
Part Number:
IRFU1N60A
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 0~2140
  • 2140~3000
  • 3000~6000
  • Unit Price
  • $.9
  • $.89
  • $.85
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/12/25

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 1.4 A
Resistance Drain-Source RDS (on) : 7 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : IPAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Package / Case : IPAK
Continuous Drain Current : 1.4 A
Resistance Drain-Source RDS (on) : 7 Ohms


Application

• Switch Mode Power Supply (SMPS)
• Uninterruptable Power Supply
• Power Factor Correction


Specifications

Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 1.4 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 0.89
IDM Pulsed Drain Current 5.6
PD @TC = 25°C Power Dissipation 36 W
Linear Derating Factor 0.28 W/°C
VGS Gate-to-Source Voltage ±30 V
dv/dt Peak Diode Recovery dv/dt 3.8 V/ns
TJ
TSTG		 Operating Junction and
Storage Temperature Range		 -55 to + 150
Soldering Temperature, for 10 seconds 300 (1.6mm from case)



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