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IRFU1N60APBF

MOSFET N-Chan 600V 1.4 Amp

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SeekIC No. : 00146216 Detail

IRFU1N60APBF: MOSFET N-Chan 600V 1.4 Amp

IRFU1N60APBF Data Sheet

floor Price/Ceiling Price

US $ .44~.98 / Piece | Get Latest Price
Part Number:
IRFU1N60APBF
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $.98
  • $.52
  • $.47
  • $.44
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 1.4 A
Resistance Drain-Source RDS (on) : 7 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : IPAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Package / Case : IPAK
Continuous Drain Current : 1.4 A
Resistance Drain-Source RDS (on) : 7 Ohms


Application

·Switch Mode Power Supply (SMPS)
·Uninterruptable Power Supply
·Power Factor Correction
·Lead-Free




Specifications

  Parameter
Max.
Units
ID@TC= 25
Continuous Drain Current,VGS@10V
1.4
A
ID@TC= 100
Continuous Drain Current,VGS@10V
0.89
IDM Pulsed Drain Current
5.6
PD @TC =25
CPower Dissipation
36
W
  Linear Derating Factor
0.28
W/
VGS Gate-to-Source Voltage
 ±30
V
dv/dt Peak Diode Recovery dv/dt
3.8
V/ns
T J
TSTG		 Operating Junction and
Storage Temperature Range
-55 to + 150
  Soldering Temperature, for 10 seconds
300 (1.6mm from case)



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