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IRFU210B

Features: • 2.7A, 200V, RDS(on) = 1.5 @VGS = 10 V• Low gate charge ( typical 7.2 nC)• Low Crss ( typical 6.8 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter Value Units VDSS Drain-Sourc...

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SeekIC No. : 004377477 Detail

IRFU210B: Features: • 2.7A, 200V, RDS(on) = 1.5 @VGS = 10 V• Low gate charge ( typical 7.2 nC)• Low Crss ( typical 6.8 pF)• Fast switching• 100% avalanche tested• Improved ...

IRFU210B Data Sheet

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Part Number:
IRFU210B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 2.7A, 200V, RDS(on) = 1.5 @VGS = 10 V
• Low gate charge ( typical 7.2 nC)
• Low Crss ( typical 6.8 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol
Parameter
Value
Units
VDSS
 Drain-Source Voltage
200
V
ID
 Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
2.7
A
1.7
A
IDM
 Drain Current - Pulsed
10
A
VGSS
 Gate-Source Voltage
±30
V
EAS
 Single Pulsed Avalanche Energy
40
mJ
IAR
 Avalanche Current
2.7
A
EAR
 Repetitive Avalanche Energy
2.6
mJ
dv/dt
 Peak Diode Recovery dv/dt
5.5
V/ns
PD
 Power Dissipation (TA = 25°C)
2.5
W
Power Dissipation (TC = 25°C)
- Derate above 25°C
26
W
0.2
W/°C
TJ,Tstg
 Operating and Storage Temperature Range
-55 to +150
°C
TL
 Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C



Description

These N-Channel enhancement mode power field effect transistors IRFU210B are produced using Fairchild's proprietary, planar, DMOS technology.

This advanced technology IRFU210B has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.




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