IRFU220BTU_AM002

MOSFET N-Ch 200V 4.6A 0.8OHM

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IRFU220BTU_AM002: MOSFET N-Ch 200V 4.6A 0.8OHM

floor Price/Ceiling Price

US $ .16~.17 / Piece | Get Latest Price
Part Number:
IRFU220BTU_AM002
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~3500
  • 3500~5000
  • 5000~10000
  • Unit Price
  • $.17
  • $.16
  • $.16
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/29

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 4.6 A
Resistance Drain-Source RDS (on) : 800 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : IPAK-3 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : IPAK-3
Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 800 mOhms
Continuous Drain Current : 4.6 A


Parameters:

Technical/Catalog InformationIRFU220BTU_AM002
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C4.6A
Rds On (Max) @ Id, Vgs800 mOhm @ 2.3A, 10V
Input Capacitance (Ciss) @ Vds 390pF @ 25V
Power - Max2.5W
PackagingTube
Gate Charge (Qg) @ Vgs16nC @ 10V
Package / CaseIPak, TO-251 (2 straight leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRFU220BTU_AM002
IRFU220BTU_AM002



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