IRFU2407

MOSFET N-CH 75V 42A I-PAK

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IRFU2407 Picture
SeekIC No. : 003432297 Detail

IRFU2407: MOSFET N-CH 75V 42A I-PAK

floor Price/Ceiling Price

Part Number:
IRFU2407
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2021/1/26

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 75V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 42A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 26 mOhm @ 25A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) @ Vgs: 110nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 2400pF @ 25V
Power - Max: 110W Mounting Type: Through Hole
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB Supplier Device Package: I-Pak    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Packaging: Tube
Mounting Type: Through Hole
Drain to Source Voltage (Vdss): 75V
Gate Charge (Qg) @ Vgs: 110nC @ 10V
Input Capacitance (Ciss) @ Vds: 2400pF @ 25V
Manufacturer: International Rectifier
Current - Continuous Drain (Id) @ 25° C: 42A
Power - Max: 110W
Rds On (Max) @ Id, Vgs: 26 mOhm @ 25A, 10V
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Supplier Device Package: I-Pak


Specifications

Parameter

Max.

Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 42 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 29
IDM Pulsed Drain Current 170
PD @TC = 25°C Power Dissipation 110 W
Linear Derating Factor 0.71 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 130 mJ
IAR Avalanche Current 25 A
EAR Repetitive Avalanche Energy

 11

mJ

dv/dt Peak Diode Recovery dv/dt

 5.0

 V/ns

TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw. 10 lbf`in (1.1N`m)



Description

Seventh Generation HEXFET® Power MOSFETs IRFU2407 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D-Pak of IRFU2407 is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.




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