IRFU2607ZPBF

Resistance Drain-Source RDS (on) :
Configuration :
Maximum Operating Temperature :
Transistor Polarity : N-Channel
Mounting Style : Through Hole
Packaging : Tube
Drain-Source Breakdown Voltage : 75 V
Gate-Source Breakdown Voltage : 20 V
Package / Case : IPAK
Continuous Drain Current : 45 A


Features:

` Advanced Process Technology
` Ultra Low On-Resistance
` 175 Operating Temperature
` Fast Switching
` Repetitive Avalanche Allowed up to Tjmax
` Lead-Free


Specifications

	Parameter	Max.	Units
ID @ TC = 25	Continuous Drain Current VGS@ 10V (Silicon Limited)	45	A
ID @ TC = 100	Continuous Drain Current, VGS@10V	32
ID @ TC = 25	Continuous Drain Current VGS@ 10V (Package Limited)	42
IDM	Pulsed Drain Current	180
PD @ TC = 25	Power Dissipation	110	W
	Linear Derating Factor	0.72	W/
VGS	Gate-to-Source Voltage	±20	V
EAS (Thermally limited)	Single Pulse Avalanche Energy	96	mJ
EAS (Tested)	Single Pulse Avalanche Energy Tested Value	96
IAR	Avalanche Current	See Fig.12a,12b,15,16	A
EAR	Repetitive Avalanche Energy		mJ
TJ TSTG	Operating Junction Storage Temperature Range	-55 to + 175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case)
	Mounting Torque, 6-32 or M3 screw	10 lbfin (1.1Nm)

Description

Specifically  designed for  Automotive applications of the IRFU2607ZPbF, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Parameters:

Technical/Catalog Information	IRFU2607ZPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	75V
Current - Continuous Drain (Id) @ 25° C	42A
Rds On (Max) @ Id, Vgs	22 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds	1440pF @ 25V
Power - Max	110W
Packaging	Tube
Gate Charge (Qg) @ Vgs	51nC @ 10V
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRFU2607ZPBF IRFU2607ZPBF