IRFU3303

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Packaging: Tube
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25° C: 33A
Gate Charge (Qg) @ Vgs: 29nC @ 10V
Manufacturer: International Rectifier
Power - Max: 57W
Rds On (Max) @ Id, Vgs: 31 mOhm @ 18A, 10V
Input Capacitance (Ciss) @ Vds: 750pF @ 25V
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Supplier Device Package: I-Pak


Features:

 Ultra Low On-Resistance
 Surface Mount (IRFR3303)
 Straight Lead (IRFU3033)
Advanced Process Technology
 Fast Switching
 Fully Avalanche Rated

Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	33	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	21
IDM	Pulsed Drain Current	120
PD @TC = 25°C	Power Dissipation	57	W
	Linear Derating Factor	0.45	W/°C
VGS	Gate-to-Source Voltage	± 20	V
EAS	Single Pulse Avalanche Energy	95	mJ
IAR	Avalanche Current	18	A
EAR	Repetitive Avalanche Energy	5.7	mJ
dv/dt	Peak Diode Recovery dv/dt	5.0	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )

Description

Fifth Generation HEXFETs of IRFU3303 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D-Pak of IRFU3303 is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.