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IRFU330B

Features: • 4.5A, 400V, RDS(on) = 1.0 @VGS = 10 V• Low gate charge ( typical 25 nC)• Low Crss ( typical 20 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter IRFR330B / IRFU330B Units VDSS Drain-Sourc...

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IRFU330B: Features: • 4.5A, 400V, RDS(on) = 1.0 @VGS = 10 V• Low gate charge ( typical 25 nC)• Low Crss ( typical 20 pF)• Fast switching• 100% avalanche tested• Improved dv...

IRFU330B Data Sheet

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Part Number:
IRFU330B
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 4.5A, 400V, RDS(on) = 1.0 @VGS = 10 V
• Low gate charge ( typical 25 nC)
• Low Crss ( typical 20 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol Parameter IRFR330B / IRFU330B Units
VDSS Drain-Source Voltage 400 V
ID Drain Current      - Continuous (TC = 25°C)
                           - Continuous (TC = 100°C)		 4.5 A
2.9 A
IDM Drain Current     - Pulsed              (Note 1) 18 A
VGSS Gate-Source Voltage 30 V
EAS Single Pulsed Avalanche Energy   (Note 2) 330 mJ
IAR Avalanche Current                        (Note 1) 4.5 A
EAR Repetitive Avalanche Energy        (Note 1) 4.8 mJ
dv/dt Peak Diode Recovery dv/dt          (Note 3) 5.5 V/ns
PD Power Dissipation (TA = 25°C) * 2.5 W
Power Dissipation (TC = 25°C)
                              - Derate above 25°C		 48 W
0.38 W/°C
TJ, Tstg Operating and Storage Temperature Range -55 to +150  
TL Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds 300  



Description

These N-Channel enhancement mode power field effect transistors IRFU330B are produced using Fairchild's proprietary,planar, DMOS technology.

This advanced technology of IRFU330B has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge.




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