Features: Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxSpecifications Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 87 A ID @ TC = 100°C Con...
IRFU3504: Features: Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxSpecifications Parameter Max. Units ...
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Parameter |
Max. |
Units | |
ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V (Silicon Limited) | 87 | A |
ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V (See Fig.9) | 61 | |
ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V (Package Limited) |
30 | |
IDM | Pulsed Drain Current | 350 | |
PD @TC = 25°C | Power Dissipation | 140 | W |
Linear Derating Factor | 0.92 | W/°C | |
VGS | Gate-to-Source Voltage | ±20 | V |
EAS | Single Pulse Avalanche Energy | 240 | mJ |
EAS (Tested ) | Single Pulse Avalanche Energy Tested Value |
480 | |
IAR | Avalanche Current | See Fig.12a, 12b, 15, 16 | A |
EAR | Repetitive Avalanche Energy | mJ | |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | |
Soldering Temperature, for 10 seconds | 300 (1.6mm from case) |
Specifically designed for Automotive applications, this HEXFET® Power MOSFET of IRFU3504 utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features of IRFU3504 combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
The D-Pak of IRFU3504 is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.