IRFU3504Z

MOSFET N-CH 40V 42A I-PAK

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IRFU3504Z Picture
SeekIC No. : 003433256 Detail

IRFU3504Z: MOSFET N-CH 40V 42A I-PAK

floor Price/Ceiling Price

US $ .85~.85 / Piece | Get Latest Price
Part Number:
IRFU3504Z
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~375
  • Unit Price
  • $.85
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/29

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 40V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 42A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 9 mOhm @ 42A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4V @ 50µA Gate Charge (Qg) @ Vgs: 45nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 1510pF @ 25V
Power - Max: 90W Mounting Type: Through Hole
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB Supplier Device Package: I-Pak    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Gate Charge (Qg) @ Vgs: 45nC @ 10V
Series: HEXFET®
Packaging: Tube
Mounting Type: Through Hole
Manufacturer: International Rectifier
Current - Continuous Drain (Id) @ 25° C: 42A
Vgs(th) (Max) @ Id: 4V @ 50µA
Input Capacitance (Ciss) @ Vds: 1510pF @ 25V
Rds On (Max) @ Id, Vgs: 9 mOhm @ 42A, 10V
Power - Max: 90W
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Supplier Device Package: I-Pak


Features:

Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax



Specifications

Parameter

Max.

Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 77 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 54
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)

 42

IDM Pulsed Drain Current 310
PD @TC = 25°C Power Dissipation 90 W
Linear Derating Factor 0.60 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS (Thermally limited) Single Pulse Avalanche Energy 77 mJ
EAS (Tested ) Single Pulse Avalanche Energy Tested Value

110

IAR Avalanche Current See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy mJ
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw. 10 lbf`in (1.1N`m)



Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET of IRFU3504Z utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of the IRFU3504Z are a 175°C junction operating temperature,fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.




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