FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA
Frequency - Transition: -
Drain to Source Voltage (Vdss): 20V
Gate Charge (Qg) @ Vgs: 19nC @ 4.5V
Series: HEXFET®
Packaging: Tube
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25° C: 75A
Manufacturer: International Rectifier
Power - Max: 90W
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Supplier Device Package: I-Pak
Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds: 1996pF @ 10V
Application High Frequency DC-DC Isolated
Converters with Synchronous Rectification
for Telecom and Industrial use
High Frequency Buck Converters for
Computer Processor PowerSpecifications
| Symbol |
Parameter |
Max. |
Units |
| VDS |
Drain-Source Voltage |
20 |
V |
| VGS |
Gate-to-Source Voltage |
± 20 |
V |
| ID @ TC = 25°C |
Continuous Drain Current, VGS @ 10V |
75 |
A |
| ID @ TC = 70°C |
Continuous Drain Current, VGS @ 10V |
63 |
| IDM |
Pulsed Drain Current |
300 |
| PD @TC = 25°C |
Maximum Power Dissipation |
90 |
W |
| PD @TC = 70°C |
Maximum Power Dissipation |
62 |
W |
|
Linear Derating Factor |
0.58 |
mW/°C |
| TJ , TSTG |
Junction and Storage Temperature Range |
-55 to + 175 |
°C |
IRFU3704 Data Sheet
