IRFU3706

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Drain to Source Voltage (Vdss): 20V
Vgs(th) (Max) @ Id: 2V @ 250µA
Series: HEXFET®
Packaging: Tube
Mounting Type: Through Hole
Power - Max: 88W
Current - Continuous Drain (Id) @ 25° C: 75A
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 10V
Gate Charge (Qg) @ Vgs: 35nC @ 4.5V
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Supplier Device Package: I-Pak
Input Capacitance (Ciss) @ Vds: 2410pF @ 10V


Application

High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
High Frequency Buck Converters for
Computer Processor Power




Specifications

Symbol	Parameter	Max.	Units
VDS	Drain-Source Voltage	20	V
VGS	Gate-to-Source Voltage	± 12	V
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	75	A
ID @ TC = 70°C	Continuous Drain Current, VGS @ 10V	53
IDM	Pulsed Drain Current	280
PD @TC = 25°C	Maximum Power Dissipation	88	W
PD @TC = 70°C	Maximum Power Dissipation	44	W
	Linear Derating Factor	0.59	mW/°C
TJ , TSTG	Junction and Storage Temperature Range	-55 to + 175	°C