IRFU3707

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA
Frequency - Transition: -
Gate Charge (Qg) @ Vgs: 19nC @ 4.5V
Series: HEXFET®
Packaging: Tube
Mounting Type: Through Hole
Manufacturer: International Rectifier
Current - Continuous Drain (Id) @ 25° C: 61A
Power - Max: 87W
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Supplier Device Package: I-Pak
Rds On (Max) @ Id, Vgs: 13 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds: 1990pF @ 15V


Application

 High Frequency DC-DC  Isolated
     Converters  with Synchronous Rectification
     for Telecom and Industrial use
 High Frequency Buck Converters for
     Computer Processor Power


Specifications

Symbol	Parameter	Max.	Units
VDS	Drain-Source Voltage	30	V
VGS	Gate-to-Source Voltage	± 20	V
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	61	A
ID @ TC = 70°C	Continuous Drain Current, VGS @ 10V	51
IDM	Pulsed Drain Current	244
PD @TC = 25°C	Maximum Power Dissipation	87	W
PD @TC = 70°C	Maximum Power Dissipation	61	W
	Linear Derating Factor	0.59	mW/°C
TJ , TSTG	Junction and Storage Temperature Range	-55 to + 175	°C