MOSFET MOSFT 30V 56A 9.5mOhm 9.6nC
IRFU3707ZPBF: MOSFET MOSFT 30V 56A 9.5mOhm 9.6nC
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
| Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 56 A | ||
| Resistance Drain-Source RDS (on) : | 12.5 mOhms | Mounting Style : | Through Hole | ||
| Package / Case : | IPAK | Packaging : | Tube |
| Parameter | Max. | Units | |
| VDS | Drain-to-Source Voltage | 30 | V |
| VGS | Gate-to-Source Voltage | ± 20 | |
| ID @ TC = 25 | Continuous Drain Current, VGS @ 10V | 56 | A |
| ID @ TC = 100 | Continuous Drain Current, VGS @ 10V | 39 | |
| IDM | Pulsed Drain Current | 220 | |
| PD @TC = 25 | Maximum Power Dissipation | 50 | W |
| PD @TC = 100 | Maximum Power Dissipation | 25 | |
| Linear Derating Factor | 0.33 | W/ | |
| T J TSTG |
Operating Junction and Storage Temperature Range | -55 to + 150 | |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case) |
| Technical/Catalog Information | IRFU3707ZPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 56A |
| Rds On (Max) @ Id, Vgs | 9.5 mOhm @ 15A, 10V |
| Input Capacitance (Ciss) @ Vds | 1150pF @ 15V |
| Power - Max | 50W |
| Packaging | Bulk |
| Gate Charge (Qg) @ Vgs | 14nC @ 4.5V |
| Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRFU3707ZPBF IRFU3707ZPBF |