IRFU3709

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA
Frequency - Transition: -
Series: HEXFET®
Gate Charge (Qg) @ Vgs: 41nC @ 4.5V
Packaging: Tube
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25° C: 90A
Power - Max: 120W
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 10V
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Supplier Device Package: I-Pak
Input Capacitance (Ciss) @ Vds: 2672pF @ 16V


Application

· High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use
· High Frequency Buck Converters for Computer Processor Power


Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	90	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	57
IDM	Pulsed Drain Current	360
PD @TC = 25°C	Maximum Power Dissipation	120	W
PD @TC = 100°C	Maximum Power Dissipation	48
VDS	Drain-Source Voltage	30	W/°C
VGS	Gate-to-Source Voltage	±20	V
	Linear Derating Factor	0.96	mW/°C
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 150	°C

Thermal Resistance

	Parameter	Typ.	Max.	Units
RJC	Junction-to-Case	-	1.04	°C/W
RJA	Junction-to-Ambient	-	110