IRFU3710ZPBF

Resistance Drain-Source RDS (on) :
Configuration :
Maximum Operating Temperature :
Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Gate-Source Breakdown Voltage : 20 V
Package / Case : IPAK
Continuous Drain Current : 56 A


Features:

  Advanced Process Technology
 Ultra Low On-Resistance
  175Operating Temperature
  Fast Switching
  Repetitive Avalanche Allowed up to Tjmax
 Lead-Free


Specifications

	Parameter	Max.	Units
ID @ TC = 25	Continuous Drain Current, VGS @ 10V (Silicon Limited)	56	A
ID @ TC =100	Continuous Drain Current, VGS @ 10V	39
ID @ TC = 25	Continuous Drain Current,VGS @ 10V (Package Limited)	42
IDM	Pulsed Drain Current	220
PD @TC= 25	Power Dissipation	140	W
	Linear Derating Factor	0.95	W/
VGS	Gate-to-Source Voltage	± 20	V
EAS (Thermally limited)	Single Pulse Avalanche Energy	150	mJ
EAS (Tested )	Single Pulse Avalanche Energy Tested Value	200
IAR	Avalanche Current	See Fig.12a, 12b, 15, 16	A
EAR	Repetitive Avalanche Energy		mJ
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175
	Reflow Soldering Temperature, for 10 seconds	300 (1.6mm from case )
	Mounting Torque, 6-32 or M3 screw	10 lbf`in (1.1N`m)

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET IRFU3710ZPbF utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175junction operating temperature, fast switching speed and improved repetitive avalanche rating . The IRFU3710ZPbF features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Parameters:

Technical/Catalog Information	IRFU3710ZPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	42A
Rds On (Max) @ Id, Vgs	18 mOhm @ 33A, 10V
Input Capacitance (Ciss) @ Vds	2930pF @ 25V
Power - Max	140W
Packaging	Tube
Gate Charge (Qg) @ Vgs	100nC @ 10V
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRFU3710ZPBF IRFU3710ZPBF