MOSFET MOSFT 100V 56A 18mOhm 69nC Qg
IRFU3710ZPBF: MOSFET MOSFT 100V 56A 18mOhm 69nC Qg
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V |
Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 56 A |
Mounting Style : | Through Hole | Package / Case : | IPAK |
Packaging : | Tube |
Parameter |
Max. |
Units | |
ID @ TC = 25 | Continuous Drain Current, VGS @ 10V (Silicon Limited) |
56 |
A |
ID @ TC =100 |
Continuous Drain Current, VGS @ 10V |
39 | |
ID @ TC = 25 | Continuous Drain Current,VGS @ 10V (Package Limited) |
42 | |
IDM | Pulsed Drain Current |
220 | |
PD @TC= 25 | Power Dissipation |
140 |
W |
Linear Derating Factor |
0.95 |
W/ | |
VGS | Gate-to-Source Voltage |
± 20 |
V |
EAS (Thermally limited) | Single Pulse Avalanche Energy |
150 |
mJ |
EAS (Tested ) | Single Pulse Avalanche Energy Tested Value |
200 | |
IAR | Avalanche Current |
See Fig.12a, 12b, 15, 16 |
A |
EAR | Repetitive Avalanche Energy |
mJ | |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 |
|
Reflow Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) | ||
Mounting Torque, 6-32 or M3 screw |
10 lbf`in (1.1N`m) |
Specifically designed for Automotive applications, this HEXFET® Power MOSFET IRFU3710ZPbF utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175junction operating temperature, fast switching speed and improved repetitive avalanche rating . The IRFU3710ZPbF features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Technical/Catalog Information | IRFU3710ZPBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25° C | 42A |
Rds On (Max) @ Id, Vgs | 18 mOhm @ 33A, 10V |
Input Capacitance (Ciss) @ Vds | 2930pF @ 25V |
Power - Max | 140W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 100nC @ 10V |
Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRFU3710ZPBF IRFU3710ZPBF |