IRFU3711

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA
Frequency - Transition: -
Drain to Source Voltage (Vdss): 20V
Power - Max: 2.5W
Series: HEXFET®
Current - Continuous Drain (Id) @ 25° C: 100A
Packaging: Tube
Mounting Type: Through Hole
Gate Charge (Qg) @ Vgs: 44nC @ 4.5V
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 15A, 10V
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Supplier Device Package: I-Pak
Input Capacitance (Ciss) @ Vds: 2980pF @ 10V


Application

  High Frequency Isolated DC-DC
     Converters with Synchronous Rectification
     for Telecom and Industrial Use
 High Frequency Buck  Converters for
     Server Processor Power Synchronous FET
  Optimized for Synchronous Buck
     Converters Including Capacitive Induced
     Turn-on  Immunity


Specifications

Symbol	Parameter	Max.	Units
VDS	Drain-Source Voltage	20	V
VGS	Gate-to-Source Voltage	± 20	V
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	110	A
ID @ TC = 70°C	Continuous Drain Current, VGS @ 10V	69
IDM	Pulsed Drain Current	440
PD @TC = 25°C	Maximum Power Dissipation	2.5	W
PD @TC = 70°C	Maximum Power Dissipation	120	W
	Linear Derating Factor	0.96	mW/°C
TJ , TSTG	Junction and Storage Temperature Range	-55 to + 175	°C

Description