Features: • 1.5A, 500V• rDS(ON) = 7.000• Single Pulse Avalanche Energy Rated• SOA is Power Dissipation Limited• Nanosecond Switching Speeds• High Input Impedance• 150 Operating Temperature• Related Literature - TB334 Guidelines for Soldering Surface...
IRFU410: Features: • 1.5A, 500V• rDS(ON) = 7.000• Single Pulse Avalanche Energy Rated• SOA is Power Dissipation Limited• Nanosecond Switching Speeds• High Input Impedance&...
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Parameters | Symbol | IRFR410, IRFU410 | Unit |
Drain to Source Voltage | VDS | 500 | V |
Drain to Gate Voltage (RGS = 20k) | VDGR | 500 | V |
Continuous Drain Current TC = 100 |
ID | 1.5 1.2 |
A |
Pulsed Drain Current | IDM | 3.0 | A |
Gate to Source Voltage | VGS | ±20 | V |
Maximum Power Dissipation | PD | 42 | W |
Linear Derating Factor | 0.33 | W/ | |
Single Pulse Avalanche Rating (See Figure 5) | EAS | Refer to UIS Curve | mJ |
Operating and Storage Temperature | TJ, TSTG | -55 to 150 | °C |
Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Techbrief 334 |
TL Tpkg |
300 260 |
°C °C |
The IRFU410 are N-Channel enhancement mode silicon gate power field effect transistors IRFU410. The IRFU410 is advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs IRFU410 are designed for applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types IRFU410 can be operated directly from integrated circuits.