IRFU410

Features: • 1.5A, 500V• rDS(ON) = 7.000• Single Pulse Avalanche Energy Rated• SOA is Power Dissipation Limited• Nanosecond Switching Speeds• High Input Impedance• 150 Operating Temperature• Related Literature - TB334 Guidelines for Soldering Surface...

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IRFU410 Picture
SeekIC No. : 004377510 Detail

IRFU410: Features: • 1.5A, 500V• rDS(ON) = 7.000• Single Pulse Avalanche Energy Rated• SOA is Power Dissipation Limited• Nanosecond Switching Speeds• High Input Impedance&...

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Part Number:
IRFU410
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/29

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Product Details

Description



Features:

• 1.5A, 500V
• rDS(ON) = 7.000
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• High Input Impedance
• 150 Operating Temperature
• Related Literature
   - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"



Pinout

  Connection Diagram


Specifications

Parameters Symbol IRFR410, IRFU410 Unit
Drain to Source Voltage VDS 500 V
Drain to Gate Voltage (RGS = 20k) VDGR 500 V
Continuous Drain Current
TC = 100
ID 1.5
1.2
A
Pulsed Drain Current IDM 3.0 A
Gate to Source Voltage VGS ±20 V
Maximum Power Dissipation PD 42 W
Linear Derating Factor   0.33 W/
Single Pulse Avalanche Rating (See Figure 5) EAS Refer to UIS Curve mJ
Operating and Storage Temperature TJ, TSTG -55 to 150 °C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief 334

TL
Tpkg

300
260

°C
°C



Description

The IRFU410 are N-Channel enhancement mode silicon gate power field effect transistors IRFU410. The IRFU410 is advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs IRFU410 are designed for applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types IRFU410 can be operated directly from integrated circuits.




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