IRFU4104PBF

Resistance Drain-Source RDS (on) :
Configuration :
Maximum Operating Temperature :
Transistor Polarity : N-Channel
Mounting Style : Through Hole
Drain-Source Breakdown Voltage : 40 V
Packaging : Tube
Gate-Source Breakdown Voltage : 20 V
Package / Case : IPAK
Continuous Drain Current : 119 A


Features:

` Advanced Process Technology
` Ultra Low On-Resistance
` 175 Operating Temperature
` Fast Switching
` Repetitive Avalanche Allowed up to Tjmax
` Lead-Free


Specifications

Characteristic	Parameter	Max.	Unit
ID @ TC = 25 ID @ TC = 100 ID @ TC = 25 IDM	Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current 􀀀	119 84 480 42	A
PD @TC = 25	Power Dissipation	140	V
	Linear Derating Factor	0.95	W/
VGS	Gate-to-Source Voltage	± 20	V
EAS (Thermally limited) EAS (Tested )	Single Pulse Avalanche Energy Single Pulse Avalanche Energy Tested Value	310 145	mJ
IAR EAR	Avalanche Current􀀀 Repetitive Avalanche Energy	See Fig.12a, 12b, 15, 16	A mJ
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )
	Mounting Torque, 6-32 or M3 screw	10 lbf`in (1.1N`m)

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET IRFU4104PbF utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of the IRFU4104PbF design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.