IRFU4105PBF

Resistance Drain-Source RDS (on) :
Configuration :
Maximum Operating Temperature :
Transistor Polarity : N-Channel
Mounting Style : Through Hole
Packaging : Tube
Gate-Source Breakdown Voltage : 20 V
Drain-Source Breakdown Voltage : 55 V
Package / Case : IPAK
Continuous Drain Current : 25 A


Features:

·Ultra Low On-Resistance
·Surface Mount (IRFR4105)
·Straight Lead (IRFU4105)
·Fast Switching
·Fully Avalanche Rated
·Lead-Free


Specifications

	Parameter	Max.	Units
ID @ VGS=-12V,TC=25	Continuous Drain Curren	27	A
ID @ VGS=-12V,TC=100	Continuous Drain Curren	19
IDM	Pulsed Drain Current	100
PD@ TC= 25	Power Dissipatio	68	W
	Linear Derating Factor	0.45	W/
VGS	Gate-to-Source Voltage	±20	V
EAS	Single Pulse Avalanche Energy	65	mJ
IAR	Avalanche Current	16	A
EAR	Repetitive Avalanche Energy	6.8	mJ
dv/dt	Peak Diode Recovery dv/dt	5.0	V/nS
TJ TSTG	Operating Junction Storage Temperature Range	-55 to 175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case)	g

Description

Fifth Generation HEXFETs from International Rectifier IRFU4105PbF utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.  This benefit of IRFU4105PbF, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The D-PAK is designed for surface mounting using vapor  phase, infrared, or wave soldering techniques.The straight lead version (IRFU series) is for through- hole mounting applications.  Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.