MOSFET MOSFT 55V 25A 45mOhm 22.7nC
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 55 V |
Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 25 A |
Mounting Style : | Through Hole | Package / Case : | IPAK |
Packaging : | Tube |
Parameter |
Max. |
Units | |
ID @ VGS=-12V,TC=25 |
Continuous Drain Curren |
27 |
A |
ID @ VGS=-12V,TC=100 |
Continuous Drain Curren |
19 | |
IDM |
Pulsed Drain Current |
100 | |
PD@ TC= 25 |
Power Dissipatio |
68 |
W |
Linear Derating Factor |
0.45 |
W/ | |
VGS |
Gate-to-Source Voltage |
±20 |
V |
EAS |
Single Pulse Avalanche Energy |
65 |
mJ |
IAR |
Avalanche Current |
16 |
A |
EAR |
Repetitive Avalanche Energy |
6.8 |
mJ |
dv/dt |
Peak Diode Recovery dv/dt |
5.0 |
V/nS |
TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 175 |
|
Soldering Temperature, for 10 seconds |
300 (1.6mm from case) |
g |
Fifth Generation HEXFETs from International Rectifier IRFU4105PbF utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit of IRFU4105PbF, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.The straight lead version (IRFU series) is for through- hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.