FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Gate Charge (Qg) @ Vgs: 27nC @ 10V
Current - Continuous Drain (Id) @ 25° C: 30A
Power - Max: 48W
Packaging: Tube
Mounting Type: Through Hole
Drain to Source Voltage (Vdss): 55V
Manufacturer: International Rectifier
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Supplier Device Package: I-Pak
Rds On (Max) @ Id, Vgs: 24.5 mOhm @ 18A, 10V
Input Capacitance (Ciss) @ Vds: 740pF @ 25V
Features: Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to TjmaxSpecifications
|
Parameter |
Max. |
Units |
| ID @ TC = 25°C |
Continuous Drain Current, VGS @ 10V (Silicon Limited) |
30 |
A |
| ID @ TC = 100°C |
Continuous Drain Current, VGS @ 10V |
21 |
| IDM |
Pulsed Drain Current |
120 |
| PD @TC = 25°C |
Power Dissipation |
48 |
W |
|
Linear Derating Factor |
0.32 |
W/°C |
| VGS |
Gate-to-Source Voltage |
±20 |
V |
| EAS (Thermally limited) |
Single Pulse Avalanche Energy |
29 |
mJ |
| EAS (Tested ) |
Single Pulse Avalanche Energy Tested Value |
46 |
| IAR |
Avalanche Current |
See Fig.12a, 12b, 15, 16 |
A |
| EAR |
Repetitive Avalanche Energy |
mJ |
TJ
TSTG |
Operating Junction and
Storage Temperature Range |
-55 to + 175 |
°C |
|
Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) |
|
Mounting Torque, 6-32 or M3 screw |
10 lbfin (1.1Nm) |
|
DescriptionSpecifically designed for Automotive applications, this HEXFET® Power MOSFET IRFU4105Z utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature,fast switching speed and improved repetitive avalanche rating . The IRFU4105Z features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
IRFU4105Z Data Sheet
