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IRFU410A

Features: ·Improved Inductive Ruggedness·Rugged Polysilicon Gate Cell Structure·Fast Switching Times·Lower Input Capacitance·Improved Gate Charge·Extended Safe Operating Area·Improved High Temperature ReliabilitySpecifications Symbol Characteristic Value Units VDSS Drain-to-Source Volt...

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SeekIC No. : 004377512 Detail

IRFU410A: Features: ·Improved Inductive Ruggedness·Rugged Polysilicon Gate Cell Structure·Fast Switching Times·Lower Input Capacitance·Improved Gate Charge·Extended Safe Operating Area·Improved High Temperatu...

IRFU410A Data Sheet

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Part Number:
IRFU410A
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/29

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Product Details

Description



Features:

·Improved Inductive Ruggedness
·Rugged Polysilicon Gate Cell Structure
·Fast Switching Times
·Lower Input Capacitance
·Improved Gate Charge
·Extended Safe Operating Area
·Improved High Temperature Reliability


Specifications

Symbol Characteristic Value Units
VDSS Drain-to-Source Voltage 520 V
ID Continuous Drain Current (TC=25)
 1.2 A
Continuous Drain Current (TC=100)
 0.8
IDM Drain Current-Pulsed                            
4.0 A
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulsed Avalanche Energy           
40 mJ
IAR Avalanche Current                                
1.2 A
EAR Repetitive Avalanche Energy                
4.2 mJ
dv/dt Peak Diode Recovery dv/dt                   
 3.5 V/ns
PD Total Power Dissipation (TC=25 )
Linear Derating Factor
 42
0.33		 W
W/
TJ , TSTG Operating Junction and
Storage Temperature Range		 -55 to +150
TL Maximum Lead Temp. for Soldering
Purposes, 1/8" from case for 5-seconds		 300

Notes;
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
L=40mH, Vdd=25V, RG=25 , Starting TJ=25
dv/dt Test Condition



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