Position: Home  > All Categories> Integrated Circuits (ICs) > IRFU5305

IRFU5305

MOSFET P-CH 55V 31A I-PAK

product image

IRFU5305 Picture
See larger image
SeekIC No. : 003431445 Detail

IRFU5305: MOSFET P-CH 55V 31A I-PAK

IRFU5305 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IRFU5305
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/29

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET P-Channel, Metal Oxide Gain : 19.5 dB
Transistor Type: - Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 55V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 31A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 65 mOhm @ 16A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) @ Vgs: 63nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 1200pF @ 25V
Power - Max: 110W Mounting Type: Through Hole
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB Supplier Device Package: I-Pak    

Description

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Type: MOSFET P-Channel, Metal Oxide
FET Feature: Standard
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Packaging: Tube
Mounting Type: Through Hole
Gate Charge (Qg) @ Vgs: 63nC @ 10V
Input Capacitance (Ciss) @ Vds: 1200pF @ 25V
Current - Continuous Drain (Id) @ 25° C: 31A
Drain to Source Voltage (Vdss): 55V
Manufacturer: International Rectifier
Power - Max: 110W
Rds On (Max) @ Id, Vgs: 65 mOhm @ 16A, 10V
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Supplier Device Package: I-Pak


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Semiconductor Modules
2DI300A-050-03
7MBR25SA-120-50
Sensors, Transducers
GP2Y0D340K
PAN3509DH-TXWA
Discrete Semiconductor Products
T508N12TOF
MUR20040
Soldering, Desoldering, Rework Products
TGK-900M-B
TGK-900M-1.6D
LED Products
LM24P20
KCG057QV1DB-G770
Line Protection, Backups
BX0023
A20B-1008-0550
View more